Aluminium Coated Wafer
6" wafer
Growth Method
CZ
Type/Dopant
P/Boron
Orientation
<100>+/-1 degree
Resistivity
0-100ohm-cm
Dia.
150+/-0.5mm
Thickness
>575um
Flat --Orientation
(100)+/-2 degree
--Length
57.5+/-2.5mm
TTV
10um max
BOW/Warp
50um max
Particle
30ea @0.5um
Package
foil package
Coated Al Layer
5000A
6" wafer
Growth Method
CZ
Type/Dopant
P/Boron
Orientation
<100>+/-1 degree
Resistivity
0-100ohm-cm
Dia.
150+/-0.5mm
Thickness
>575um
Flat --Orientation
(100)+/-2 degree
--Length
57.5+/-2.5mm
TTV
10um max
BOW/Warp
50um max
Particle
30ea @0.5um
Package
foil package
coated Layer
Sio2 2000A
Ti 200A
Al 5000A
........................................................................................................................................................................................
8" wafer
Growth Method
CZ
Type/Dopant
P/Boron
Orientation
<100>
Resistivity
0-100ohm-cm
Dia.
200+/-0.5mm
Thickness
>600um
TTV
10um max
BOW/Warp
50um max
Particle
30ea @0.2um
Package
foil package
Al coated Layer
5000A
 
   
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益銓國際有限公司 Yia Chuan International Co., Ltd. 1F,No.147,Hsichou St., Chungli City, Taoyuan County , Taiwan
Tel:+886-3-4521569  •Fax:+886-3-4519810 E-mail:service@ycicorp.com.tw